Freescale Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Supply Voltage (see Note 2)
Voltage Relative to VSS (see Note 2)
Output Current per Pin
Package Power Dissipation (see Note 3)
Temperature Under Bias (see Note 3)
Symbol
VDD
Vin
Iout
PD
Tbias
Value
4.6
–0.5 to VDD + 3 V
± 20
Unit
V
V
mA
W
° C
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
Commercial
Industrial
–10 to 85
–40 to 85
,
OR
T
UC
ND
O
IC
EM
S
LE AND CHARACTERISTICS
CA
(VDD = 3.3 V ± 5%, T S J < 20 ° C, Unless Otherwise Noted)
RE
BY
D
E
IV
VDD
Operating Temperature (Junction) H
RC
TJ
IN
Operating Temperature             Commercial            TA                            0 to 70                       °C
Industrial –40 to 85
Storage Temperature Tstg –55 to 125 ° C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. All voltages are referenced to VSS.
3. Power dissipation capability will be dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
DC OPERATING CONDITIONS
E
RECOMMENDED OPERATING CONDITIONS F (Voltages Referenced to VSS = 0 V)
Parameter Symbol Min
Power Supply Voltage 3.1
Input Low Voltage A VIL –0.5*
C
Typ
3.3
0
.
Max
3.5
120
0.8
Unit
V
° C
V
Input High Voltage
VIH
2.2
3
5.5
V
* VIL (min) = –3.0 V ac (pulse width
20 ns).
DC CHARACTERISTICS AND SUPPLY CURRENTS
Active Power Supply Current
Parameter
Symbol
IDDA
Min
Max
300
Unit
mA
Input Leakage Current (0 V
Output Leakage Current (0 V
Vin
Vin
VDD)
VDD)
Ilkg(I)
Ilkg(O)
± 1
± 1
μ A
μ A
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = – 4 mA)
VOL
VOH
2.4
0.4
V
V
PACKAGE THERMAL CHARACTERISTICS
Rating
Thermal Resistance Junction to Ambient (200 lfpm, 4 Layer Board) (see Note 2)
Thermal Resistance Junction to Board (Bottom) (see Note 3)
Thermal Resistance Junction to Case (Top) (see Note 4)
Symbol
R θ JA
R θ JB
R θ JC
Max
36
19
8
Unit
° C/W
° C/W
° C/W
NOTES:
1. RAM junction temperature is a function of on–chip power dissipation, package thermal impedance, mounting site temperature, and
mounting site thermal impedance.
2. Per SEMI G38–87.
3. Indicates the average thermal impedance between the die and the mounting surface.
4. Indicates the average thermal impedance between the die and the case top surface. Measured via the cold plate method (MIL SPEC–883
Method 1012.1).
MCM69C432 ? SCM69C432
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA FAST SRAM
相关PDF资料
MCP1401T-E/OT IC MOSFET DRVR INV 500MA SOT23-5
MCP1403T-E/MF IC MOSFET DRIVER 4.5A DUAL 8DFN
MCP1406-E/SN IC MOSFET DVR 6A 8SOIC
MCP14628T-E/MF IC MOSFET DVR 2A SYNC BUCK 8-DFN
MCP14700T-E/MF IC MOSFET DRIVER HIGH/LOW 8DFN
MCP14E3T-E/MF IC MOSFET DVR 4.0A DUAL 8DFN
MCP14E6T-E/MF IC MOSFET DRIVER 2A 8DFN-S
MCP14E9T-E/MF IC MOSFET DRIVER 3A 8DFN-S
相关代理商/技术参数
MCM69C432TQ20R 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:16K x 64 CAM
MCM69C433 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:16K x 64 CAM
MCM69C433TQ15 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:16K x 64 CAM
MCM69C433TQ15R 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:16K x 64 CAM
MCM69D536 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Synchronous Dual I/O, Dual Address SRAM
MCM69D536TQ6 制造商:Motorola Inc 功能描述:Synchronous SRAM, 32K x 36, 176 Pin, Plastic, QFP
MCM69D536TQ6R 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Synchronous Dual I/O, Dual Address SRAM
MCM69D536TQ8 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Synchronous Dual I/O, Dual Address SRAM